Manufacturer Part Number
IRFHM3911TRPBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor
Part of the HEXFET series
Product Features and Performance
100V drain-source voltage rating
Low on-resistance of 115mΩ @ 6.3A, 10V
Continuous drain current of 3.2A (Ta), 20A (Tc)
Input capacitance of 760pF @ 50V
Power dissipation of 2.8W (Ta), 29W (Tc)
Operating temperature range of -55°C to 150°C
Product Advantages
Excellent power efficiency due to low on-resistance
High current handling capability
Compact 8-PQFN (3x3) package
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
Threshold Voltage (Vgs(th)): 4V @ 35A
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg): 26nC @ 10V
Quality and Safety Features
RoHS 3 compliant
Suitable for high-reliability applications
Compatibility
Surface mount device
Tape and reel packaging
Application Areas
Power supplies
Motor drives
Switching regulators
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent power efficiency and high current handling
Compact and surface mount package
Wide operating temperature range
Proven reliability and RoHS compliance
