Manufacturer Part Number
IRFH8318TRPBF
Manufacturer
Infineon Technologies
Introduction
The IRFH8318TRPBF is a high-performance N-Channel MOSFET transistor from Infineon Technologies.
Product Features and Performance
30V drain-to-source voltage (Vdss)
Maximum gate-to-source voltage (Vgs) of ±20V
Low on-resistance (Rds(on)) of 3.1mΩ @ 20A, 10V
Continuous drain current (Id) of 27A (Ta) and 120A (Tc)
Input capacitance (Ciss) of 3180pF @ 10V
Maximum power dissipation of 3.6W (Ta) and 59W (Tc)
Operating temperature range of -55°C to 150°C (TJ)
Product Advantages
Excellent performance in high-power, high-frequency applications
Compact PQFN (5x6) package for efficient heat dissipation
Suitable for a wide range of power conversion and control applications
Key Technical Parameters
MOSFET technology
N-Channel FET type
Threshold voltage (Vgs(th)) of 2.35V @ 50A
Gate drive voltage range of 4.5V to 10V
Maximum gate charge (Qg) of 41nC @ 10V
Quality and Safety Features
RoHS3 compliant
Surface mount package for reliable assembly
Compatibility
Compatible with a variety of power electronics and control applications
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Industrial and automotive electronics
Product Lifecycle
Current production model
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent performance and efficiency in high-power, high-frequency applications
Compact and thermally efficient package design
Wide operating temperature range and robust technical parameters
Suitable for a variety of power conversion and control applications
RoHS3 compliance for environmentally-friendly use