Manufacturer Part Number
IRFH6200TRPBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel MOSFET with low on-resistance and fast switching
Product Features and Performance
Very low on-resistance of 0.95 mOhm @ 50A, 10V
High current capability of 49A (Ta) and 100A (Tc)
Fast switching with low gate charge of 230 nC @ 4.5V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent thermal performance and high power density
Efficient power conversion with low conduction and switching losses
Reliable and robust design for demanding applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
Gate-to-Source Voltage (Vgs): ±12V
Input Capacitance (Ciss): 10,890 pF @ 10V
Power Dissipation: 3.6W (Ta), 156W (Tc)
Quality and Safety Features
ROHS3 compliant
Suitable for demanding industrial and automotive applications
Compatibility
Surface mount package (8-PQFN 5x6)
Compatible with standard MOSFET drivers and control circuits
Application Areas
Switching power supplies
Motor drives
Inverters and converters
Industrial and automotive electronics
Product Lifecycle
Current product, no plans for discontinuation
Replacement and upgrade options available from Infineon
Key Reasons to Choose this Product
Excellent performance-to-cost ratio
Proven reliability and robustness
Optimized for high-efficiency power conversion
Wide range of compatible applications