Manufacturer Part Number
IRFH5302TRPBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with very low on-resistance and high current capability in a compact PQFN (5x6) package.
Product Features and Performance
Ultra-low on-resistance down to 2.1 mΩ
High current rating up to 100A (at Tc)
Wide operating temperature range from -55°C to 150°C
Low gate charge for high switching speed
Compact PQFN (5x6) package
Product Advantages
Excellent thermal and electrical performance
High power density
Robust and reliable design
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 2.1mΩ @ 50A, 10V
Current Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15V
Power Dissipation (Max): 3.6W (Ta), 100W (Tc)
Quality and Safety Features
ROHS3 compliant
Robust and reliable design
Compatibility
Surface mount package
Suitable for a wide range of power electronic applications
Application Areas
Automotive electronics
Industrial power supplies
Telecom power systems
Motor drives
Lighting systems
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose This Product
Excellent thermal and electrical performance
High power density in a compact package
Robust and reliable design
Suitable for a wide range of power electronic applications
