Manufacturer Part Number
IRFH5010TRPBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET
Product Features and Performance
HEXFET power MOSFET
Low on-resistance
High power handling capability
Fast switching speed
High avalanche capability
Designed for high-frequency, high-current switching applications
Product Advantages
Excellent thermal performance
Improved reliability and efficiency
Reduced power losses
Compact and space-saving design
Key Technical Parameters
Drain to Source Voltage (Vdss): 100 V
Gate-Source Voltage (Vgs Max): ±20 V
On-Resistance (Rds(on) Max): 9 mΩ @ 50 A, 10 V
Continuous Drain Current (Id): 13 A (Ta), 100 A (Tc)
Input Capacitance (Ciss Max): 4340 pF @ 25 V
Power Dissipation (Max): 3.6 W (Ta), 250 W (Tc)
Operating Temperature: -55°C to 150°C (TJ)
Quality and Safety Features
RoHS3 compliant
ESD protection
Compatibility
Surface mount package: 8-PQFN (5x6)
Application Areas
High-frequency, high-current switching applications
Power supplies
Motor drives
Inverters
Lighting ballasts
Industrial automation
Product Lifecycle
Currently in production
No discontinuation plans
Several Key Reasons to Choose This Product
Excellent thermal performance and high power handling capability
Low on-resistance for improved efficiency
Fast switching speed for high-frequency applications
Compact and space-saving design
Reliable and durable construction
RoHS3 compliance for environmental responsibility
