Manufacturer Part Number
IRFH3702TRPBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel HEXFET power MOSFET
Product Features and Performance
Low on-resistance for high efficiency
Low input capacitance for fast switching
Rugged avalanche rated
Optimized for high-frequency, high-power applications
Product Advantages
Excellent thermal performance
High power density
High reliability
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20 V
Rds On (Max) @ Id, Vgs: 7.1 mΩ @ 16 A, 10 V
Current Continuous Drain (Id) @ 25°C: 16 A (Ta), 42 A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 15 V
Power Dissipation (Max): 2.8 W (Ta)
Vgs(th) (Max) @ Id: 2.35 V @ 25 A
Drive Voltage (Max Rds On, Min Rds On): 4.5 V, 10 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Quality and Safety Features
RoHS3 compliant
Optimized for high-frequency, high-power applications
Compatibility
Surface mount package
Application Areas
Switching power supplies
Motor drives
DC-DC converters
Inverters
Lighting ballasts
Product Lifecycle
Currently in production
Replacements and upgrades available
Several Key Reasons to Choose This Product
Excellent thermal performance for high power density
Low on-resistance for high efficiency
Fast switching capability for high-frequency applications
Rugged avalanche rating for reliable operation
Surface mount packaging for easy integration
