IRFB7740PBF - Infineon Technologies

Manufacturer Part Number

IRFB7740PBF

Manufacturer

Infineon Technologies

Introduction

High-power N-channel MOSFET transistor

Suitable for high-frequency switching applications

Product Features and Performance

Wide operating temperature range: -55°C to 175°C

Low on-state resistance: 7.3 mΩ @ 52 A, 10 V

High continuous drain current: 87 A @ 25°C

Low gate charge: 122 nC @ 10 V

High voltage rating: 75 V drain-to-source voltage

Product Advantages

Excellent thermal performance

High efficiency

Reliable operation

Compact TO-220 package

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 75 V

Gate-to-Source Voltage (Vgs): ±20 V

On-State Resistance (Rds(on)): 7.3 mΩ @ 52 A, 10 V

Continuous Drain Current (Id): 87 A @ 25°C

Input Capacitance (Ciss): 4650 pF @ 25 V

Power Dissipation (Pd): 143 W @ 25°C

Quality and Safety Features

RoHS3 compliant

Robust TO-220 package

Compatibility

Suitable for a wide range of high-power, high-frequency switching applications

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Lighting ballasts

Inductive heating

Product Lifecycle

Current product, not nearing discontinuation

Replacement and upgrade options available

Key Reasons to Choose This Product

Excellent thermal management and efficiency

High reliability and robustness

Compact and easy to integrate

Suitable for a wide range of high-power, high-frequency applications