Manufacturer Part Number
IRFB7530PBF
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product | Transistors - FETs, MOSFETs - Single
Product Features and Performance
N-Channel MOSFET
60V Drain to Source Voltage (Vdss)
±20V Gate to Source Voltage (Vgs)
2mOhm Max Drain-Source On-Resistance (Rds(on)) @ 100A, 10V
195A Continuous Drain Current (Id) @ 25°C (Tc)
13703pF Max Input Capacitance (Ciss) @ 25V
375W Max Power Dissipation (Tc)
411nC Max Gate Charge (Qg) @ 10V
Product Advantages
Efficient power switching capabilities
High current handling
Low on-resistance
Wide operating temperature range (-55°C to 175°C)
Key Technical Parameters
MOSFET Technology
TO-220AB Package
Through Hole Mounting
Quality and Safety Features
RoHS3 Compliant
Compatibility
HEXFET, StrongIRFET Series
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Product Lifecycle
Active product
Replacements and upgrades available
Key Reasons to Choose This Product
Robust and reliable performance
Efficient power handling capabilities
Wide operating temperature range
Compatibility with existing systems
Availability of replacements and upgrades