Manufacturer Part Number
IRFB4510PBF
Manufacturer
Infineon Technologies
Introduction
The IRFB4510PBF is a high-performance n-channel MOSFET transistor in the HEXFET series from Infineon Technologies. It is designed for use in a variety of power electronics and switching applications.
Product Features and Performance
High drain-to-source voltage (Vdss) of 100V
Low on-resistance (Rds(on)) of 13.5mΩ @ 37A, 10V
High continuous drain current (Id) of 62A at 25°C
Wide operating temperature range of -55°C to 175°C
Low gate charge (Qg) of 87nC @ 10V for efficient switching
High input capacitance (Ciss) of 3180pF @ 50V
Product Advantages
Excellent efficiency and low power loss due to low Rds(on)
Reliable performance across a wide temperature range
Efficient switching characteristics for high-frequency applications
Robust design and construction for durability
Key Technical Parameters
Vdss: 100V
Vgs(max): ±20V
Rds(on)(max): 13.5mΩ @ 37A, 10V
Id(cont): 62A @ 25°C
Ciss(max): 3180pF @ 50V
Pd(max): 140W @ Tc
Quality and Safety Features
RoHS3 compliant
TO-220AB package for reliable thermal management
Compatibility
Compatible with a wide range of power electronics and switching applications
Application Areas
Switching power supplies
DC-DC converters
Motor drives
Inverters
Industrial automation and control systems
Product Lifecycle
Currently in production
Replacements and upgrades available
Several Key Reasons to Choose This Product
Excellent efficiency and low power loss
Reliable performance across a wide temperature range
Efficient switching characteristics for high-frequency applications
Robust design and construction for durability
RoHS3 compliance for environmental safety
IRFB4510GIR