Manufacturer Part Number
IRFB4332PBF
Manufacturer
Infineon Technologies
Introduction
The IRFB4332PBF is a high-performance N-channel HEXFET power MOSFET from Infineon Technologies, designed for a wide range of power conversion and switching applications.
Product Features and Performance
Drain-to-Source Voltage (Vdss): 250V
Continuous Drain Current (Id) @ 25°C: 60A
On-State Resistance (Rds(on)) @ 35A, 10V: 33mΩ
Input Capacitance (Ciss): 5860pF @ 25V
Power Dissipation (Tc): 390W
Gate Charge (Qg): 150nC @ 10V
Product Advantages
Excellent performance and efficiency
High power density
Reliable and robust design
Suitable for high-voltage, high-current applications
Key Technical Parameters
N-Channel MOSFET
HEXFET Technology
TO-220AB Package
-40°C to 175°C Operating Temperature
±30V Gate-to-Source Voltage (Vgs)
Quality and Safety Features
RoHS3 Compliant
Proven reliability and quality
Compatibility
Suitable for a wide range of power conversion and switching applications
Application Areas
Inverters
Motor Drives
Power Supplies
Switching Power Amplifiers
Industrial and Consumer Electronics
Product Lifecycle
This product is currently in production and widely available.
Replacements and upgrades may be available in the future.
Key Reasons to Choose This Product
Exceptional performance and efficiency
Robust and reliable design
Suitable for high-voltage, high-current applications
Wide operating temperature range
RoHS3 compliance for environmental safety
IRFB4410G/ZIR
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