IRFB4229PBF - Infineon Technologies

Manufacturer Part Number

IRFB4229PBF

Manufacturer

Infineon Technologies

Introduction

The IRFB4229PBF is a high-performance N-channel power MOSFET transistor from Infineon Technologies. It is part of the HEXFET series and designed for a wide range of power electronics applications.

Product Features and Performance

Very low on-resistance (Rds(on) = 46 mΩ) for high efficiency

High blocking voltage (Vdss = 250 V) for use in high-voltage applications

Low gate charge (Qg = 110 nC) for fast switching

Wide operating temperature range (-40°C to 175°C)

High current capability (Id = 46 A at 25°C)

Low input capacitance (Ciss = 4560 pF) for high-frequency operation

Product Advantages

Excellent efficiency due to low on-resistance

Suitable for high-voltage applications

Fast switching for improved power conversion

Wide temperature range for use in various environments

High current capability for high-power applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 250 V

Gate to Source Voltage (Vgs): ±30 V

On-Resistance (Rds(on)): 46 mΩ @ 26 A, 10 V

Continuous Drain Current (Id): 46 A at 25°C

Input Capacitance (Ciss): 4560 pF @ 25 V

Power Dissipation (Tc): 330 W

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

TO-220AB package

Suitable for a wide range of power electronics applications

Application Areas

Switching power supplies

Motor drives

Inverters

Servo amplifiers

Industrial and consumer electronics

Product Lifecycle

Currently in active production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent efficiency and performance due to low on-resistance

Suitable for high-voltage and high-power applications

Fast switching for improved power conversion

Wide operating temperature range for use in various environments

High quality and safety compliance