Manufacturer Part Number
IRFB4127PBF
Manufacturer
Infineon Technologies
Introduction
The IRFB4127PBF is a high-performance N-Channel MOSFET transistor from Infineon Technologies, designed for a wide range of power electronics applications.
Product Features and Performance
High voltage rating of 200V
Low on-resistance of 20mOhm
High continuous drain current of 76A at 25°C
Wide operating temperature range of -55°C to 175°C
Fast switching performance with low gate charge of 150nC
High power dissipation capability of 375W
Product Advantages
Excellent performance-to-cost ratio
Reliable and robust design
Suitable for high-power, high-efficiency applications
Ease of integration into power electronics systems
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 20mOhm
Continuous Drain Current (Id): 76A
Power Dissipation (Ptot): 375W
Input Capacitance (Ciss): 5380pF
Gate Charge (Qg): 150nC
Quality and Safety Features
RoHS3 compliant
Reliable and durable design
Suitable for high-stress and high-power applications
Compatibility
Through-hole TO-220AB package
Compatible with a wide range of power electronics circuits and systems
Application Areas
Switch-mode power supplies
Motor drives
Inverters and converters
Automotive electronics
Industrial power control systems
Product Lifecycle
Current production status: Active
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Reliable and robust design
Suitable for high-power, high-efficiency applications
Easy integration into power electronics systems
Wide operating temperature range
Fast switching performance with low gate charge
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