Manufacturer Part Number
IRFB11N50APBF
Manufacturer
Infineon Technologies
Introduction
The IRFB11N50APBF is a single N-Channel MOSFET transistor in a TO-220AB package.
Product Features and Performance
High voltage MOSFET with a drain-source voltage rating of 500V
Low on-resistance of 520mΩ at 6.6A, 10V
High continuous drain current of 11A at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge of 52nC at 10V
Product Advantages
Ideal for high voltage, high power switching applications
Excellent performance and efficiency
Reliable and robust design
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 520mΩ @ 6.6A, 10V
Continuous Drain Current (Id): 11A @ 25°C
Input Capacitance (Ciss): 1423pF @ 25V
Power Dissipation (Pd): 170W @ 25°C case temperature
Quality and Safety Features
RoHS3 compliant
Reliable and robust design for high voltage and high power applications
Compatibility
Compatible with a wide range of high voltage, high power switching applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and automotive power electronics
Product Lifecycle
This product is currently in production and widely available.
Replacement or upgrade options may be available from Infineon or other manufacturers.
Key Reasons to Choose This Product
Excellent performance and efficiency in high voltage, high power applications
Reliable and robust design for long-term operation
Wide operating temperature range and compatibility with various applications
RoHS3 compliance for environmental sustainability
IRFB11N50LIR