Manufacturer Part Number
IRF9Z34NPBF
Manufacturer
Infineon Technologies
Introduction
The IRF9Z34NPBF is a P-channel MOSFET transistor designed for power switching and control applications.
Product Features and Performance
P-channel MOSFET with a drain-source voltage of 55V
Low on-resistance of 100 mOhm at 10A, 10V
High continuous drain current of 19A at 25°C
Wide operating temperature range of -55°C to 175°C
Input capacitance of 620 pF at 25V
Gate charge of 35 nC at 10V
Power dissipation of 68W at Tc
Product Advantages
High efficiency power switching
Low conduction losses
Reliable performance over wide temperature range
Suitable for various power control applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 55V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 100 mOhm @ 10A, 10V
Continuous Drain Current (Id): 19A @ 25°C
Input Capacitance (Ciss): 620 pF @ 25V
Gate Charge (Qg): 35 nC @ 10V
Power Dissipation (Tc): 68W
Quality and Safety Features
ROHS3 compliant
TO-220AB package for reliable thermal performance
Designed for safe and reliable operation
Compatibility
Compatible with various power control and switching circuits
Application Areas
Switching power supplies
Motor drives
Lighting control
Industrial automation
Home appliances
Product Lifecycle
Currently in production
Replacement and upgrade options available
Key Reasons to Choose
High efficiency and low losses
Wide operating temperature range
Reliable and robust design
Suitable for various power control applications
Readily available and well-supported product
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