Manufacturer Part Number
IRF9Z24NPBF
Manufacturer
Infineon Technologies
Introduction
The IRF9Z24NPBF is a P-channel power MOSFET from Infineon Technologies, a leading manufacturer of semiconductor solutions.
Product Features and Performance
55V drain-to-source voltage
±20V gate-to-source voltage
175mOhm maximum on-resistance at 7.2A, 10V
12A continuous drain current at 25°C case temperature
350pF maximum input capacitance at 25V
45W maximum power dissipation at 25°C case temperature
Operating temperature range of -55°C to 175°C
Product Advantages
Low on-resistance for efficient power switching
High voltage and current handling capabilities
Suitable for a wide range of power electronics applications
Reliable performance over a wide temperature range
Key Technical Parameters
P-channel MOSFET technology
4V maximum gate-to-source threshold voltage at 250A
10V maximum drive voltage for minimum on-resistance
19nC maximum gate charge at 10V
Quality and Safety Features
ROHS3 compliant
TO-220AB package for through-hole mounting
Reliable performance in various operating conditions
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Industrial automation and control
Automotive electronics
Product Lifecycle
The IRF9Z24NPBF is an active product, and there are no plans for discontinuation.
Replacement or upgrade options may be available from Infineon Technologies.
Key Reasons to Choose This Product
Excellent performance characteristics, including low on-resistance and high voltage and current handling
Reliable operation over a wide temperature range
Suitable for a variety of power electronics applications
Proven quality and safety features from a reputable manufacturer
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