Manufacturer Part Number
IRF9952TRPBF
Manufacturer
Infineon Technologies
Introduction
Discrete semiconductor product
Transistors FETs, MOSFETs Arrays category
Product Features and Performance
N and P-Channel MOSFET
30V Drain to Source Voltage (Vdss)
100mOhm Rds On (Max) @ 2.2A, 10V
Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) technology
5A Continuous Drain Current (Id) @ 25°C
190pF Input Capacitance (Ciss) (Max) @ 15V
14nC Gate Charge (Qg) (Max) @ 10V
Logic Level Gate FET Feature
1V Vgs(th) (Max) @ 250A
Product Advantages
RoHS3 compliant
Wide operating temperature range of -55°C to 150°C (TJ)
2W maximum power rating
Surface mount package
Key Technical Parameters
30V Drain to Source Voltage (Vdss)
100mOhm Rds On (Max) @ 2.2A, 10V
5A Continuous Drain Current (Id) @ 25°C
190pF Input Capacitance (Ciss) (Max) @ 15V
14nC Gate Charge (Qg) (Max) @ 10V
1V Vgs(th) (Max) @ 250A
Quality and Safety Features
RoHS3 compliant
Wide operating temperature range of -55°C to 150°C (TJ)
Compatibility
Surface mount package (8-SOIC)
Application Areas
Suitable for a variety of electronic circuits and systems that require N and P-Channel MOSFET transistors
Product Lifecycle
Active product
No information on discontinuation or replacement available
Key Reasons to Choose This Product
RoHS3 compliant for environmental compliance
Wide operating temperature range for versatile applications
2W maximum power rating for moderate power handling
Surface mount package for compact design
N and P-Channel MOSFET configuration for flexible circuit design
Competitive technical specifications, including low Rds On, high current rating, and low input capacitance
IRF9910PBF MOSIR