Manufacturer Part Number
IRF9540NSTRRPBF
Manufacturer
Infineon Technologies
Introduction
The IRF9540NSTRRPBF is a P-Channel MOSFET transistor from Infineon Technologies' HEXFET series, designed for high-power switching applications.
Product Features and Performance
100V Drain to Source Voltage (Vdss)
23A Continuous Drain Current (Id) at 25°C
117mΩ maximum On-Resistance (Rds(on)) at 14A, 10V
1450pF maximum Input Capacitance (Ciss) at 25V
1W Power Dissipation at 25°C ambient temperature (Ta)
110W Power Dissipation at 25°C case temperature (Tc)
-55°C to 150°C Operating Temperature Range
Product Advantages
High power handling capability
Low on-resistance for high efficiency
Suitable for high-frequency switching applications
Robust design for reliable operation
Key Technical Parameters
P-Channel MOSFET
±20V maximum Gate-Source Voltage (Vgs)
4V maximum Gate Threshold Voltage (Vgs(th)) at 250A
110nC maximum Gate Charge (Qg) at 10V
Quality and Safety Features
RoHS3 compliant
D2PAK (TO-263-3) surface mount package
Compatibility
This MOSFET is compatible with a wide range of high-power electronic applications, including power supplies, motor drives, and industrial control systems.
Application Areas
Switching power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
The IRF9540NSTRRPBF is an active product, with no discontinuation plans at this time. Replacement or upgraded products may be available in the future.
Key Reasons to Choose This Product
High power handling and efficiency
Reliable and robust design
Suitable for high-frequency switching applications
Wide operating temperature range
RoHS compliance for environmental friendliness
IRF9540PBF MOSElectro-Films (EFI) / Vishay