Manufacturer Part Number
IRF9317TRPBF
Manufacturer
Infineon Technologies
Introduction
The IRF9317TRPBF is a P-channel power MOSFET in a surface mount 8-SOIC package. It is part of the HEXFET series from Infineon Technologies.
Product Features and Performance
Drain to Source Voltage (Vdss) of 30V
Maximum Gate-Source Voltage (Vgs) of ±20V
On-Resistance (Rds(on)) of 6.6mΩ at 16A, 10V
Continuous Drain Current (Id) of 16A at 25°C
Input Capacitance (Ciss) of 2820pF at 15V
Maximum Power Dissipation of 2.5W at 25°C
Operating Temperature Range of -55°C to 150°C
Product Advantages
Low on-resistance for efficient power switching
High power handling capability
Wide operating temperature range
Suitable for a variety of power conversion and control applications
Key Technical Parameters
MOSFET Technology
P-Channel FET Type
Threshold Voltage (Vgs(th)) of 2.4V at 50A
Gate Charge (Qg) of 92nC at 10V
Quality and Safety Features
RoHS3 compliant
8-SOIC surface mount package
Compatibility
Suitable for use in power conversion, motor control, and other power electronics applications
Application Areas
Power supplies
Motor drives
Switching regulators
Inverters
General power electronics
Product Lifecycle
Current production part
Replacement and upgrade options available from Infineon
Key Reasons to Choose
Excellent power handling and efficiency
Wide operating temperature range
Proven HEXFET technology from a leading semiconductor manufacturer
Surface mount packaging for compact design
IRF9317TRPBF MOSIR