Manufacturer Part Number
IRF8910TRPBF
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
RoHS3 Compliant
8-SOIC (0.154", 3.90mm Width) package
HEXFET Series
Tape & Reel (TR) packaging
Operating Temperature: -55°C ~ 150°C (TJ)
Power Rating: 2W
2 N-Channel (Dual) Configuration
Drain to Source Voltage (Vdss): 20V
On-Resistance (Rds(on)): 13.4mOhm @ 10A, 10V
MOSFET (Metal Oxide) Technology
Continuous Drain Current (Id): 10A @ 25°C
Input Capacitance (Ciss): 960pF @ 10V
Logic Level Gate
Product Advantages
High power density
Low on-resistance
Efficient switching performance
Reliable operation across wide temperature range
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
On-Resistance (Rds(on)): 13.4mOhm
Continuous Drain Current (Id): 10A
Input Capacitance (Ciss): 960pF
Gate Threshold Voltage (Vgs(th)): 2.55V @ 250A
Gate Charge (Qg): 11nC @ 4.5V
Quality and Safety Features
RoHS3 Compliant
Reliable operation across wide temperature range (-55°C to 150°C)
Compatibility
Surface Mount Mounting Type
Application Areas
Power conversion and control applications
Motor drives
Switching power supplies
Industrial and consumer electronics
Product Lifecycle
Active product
Replacements and upgrades available from Infineon
Key Reasons to Choose
High power density
Low on-resistance for efficient switching
Reliable operation across wide temperature range
Compatibility with surface mount applications
Availability of replacements and upgrades from the manufacturer
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