Manufacturer Part Number
IRF8313TRPBF
Manufacturer
Infineon Technologies
Introduction
Dual N-Channel MOSFET Transistor
Product Features and Performance
HEXFET series transistor
Surface mount package (8-SOIC)
Operating temperature range: -55°C to 175°C
Power rating: 2W
Drain-to-source voltage: 30V
On-resistance (Rds(on)): 15.5mΩ at 9.7A, 10V
Continuous drain current: 9.7A at 25°C
Input capacitance: 760pF at 15V
Logic-level gate
Gate threshold voltage: 2.35V at 25A
Product Advantages
High power density
Low on-resistance
Logic-level gate for easy control
Wide operating temperature range
Key Technical Parameters
MOSFET technology
N-channel configuration
Dual transistor in 8-SOIC package
30V drain-to-source voltage
7A continuous drain current
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount assembly
Compatibility
Can be used in a variety of electronic circuits and applications
Application Areas
Power supplies
Motor drives
Switching circuits
Amplifiers
General purpose switching
Product Lifecycle
Currently available
No indication of near discontinuation
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
High power density and efficiency
Low on-resistance for reduced power losses
Logic-level gate for easy control
Wide operating temperature range
Dual transistor configuration for space-saving design
Reliable and RoHS3 compliant
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