Manufacturer Part Number
IRF830PBF
Manufacturer
Infineon Technologies
Introduction
High performance N-channel power MOSFET
Product Features and Performance
High input impedance
High current handling capability
Fast switching speed
Low on-state resistance
Wide operating temperature range
Product Advantages
Efficient power conversion
Reliable and robust performance
Suitable for various power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500 V
Gate-to-Source Voltage (Vgs): ±20 V
On-State Resistance (Rds(on)): 1.5 Ω
Continuous Drain Current (Id): 4.5 A
Input Capacitance (Ciss): 610 pF
Power Dissipation (Tc): 74 W
Quality and Safety Features
RoHS3 compliant
Suitable for high temperature operation (-55°C to 150°C)
Compatibility
Applicable for various power conversion and switching circuits
Application Areas
Switching power supplies
Motor drives
Lighting ballasts
Automotive electronics
Industrial controls
Product Lifecycle
Currently available, no immediate plans for discontinuation
Replacement or upgrade options may be available from Infineon
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-state resistance for efficient power conversion
Fast switching speed for improved system performance
Wide operating temperature range for versatile applications
Reliable and robust design for long-term use
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