Manufacturer Part Number
IRF8113TR
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor
Designed for use in a variety of power management and switching applications
Product Features and Performance
Operates over a wide temperature range of -55°C to 150°C
Low on-resistance (Rds(on)) of 5.6 mOhm
High continuous drain current (Id) of 17.2A
Low input capacitance (Ciss) of 2910 pF
Maximum power dissipation of 2.5W
Product Advantages
Excellent thermal management
High efficiency and low power loss
Suitable for a variety of power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Maximum Gate-Source Voltage (Vgs(max)): ±20V
Threshold Voltage (Vgs(th)): 2.2V
Quality and Safety Features
RoHS non-compliant
8-SOIC (0.154", 3.90mm Width) package
Compatibility
Suitable for surface mount applications
Application Areas
Power management
Switching power supplies
Motor drives
Industrial controls
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgrade options may be available from Infineon Technologies
Key Reasons to Choose This Product
Excellent thermal performance and power efficiency
Robust and reliable design for demanding applications
Wide operating temperature range and high current capability
Proven MOSFET technology from a reputable manufacturer