Manufacturer Part Number
IRF8010PBF
Manufacturer
Infineon Technologies
Introduction
The IRF8010PBF is a high-performance N-channel power MOSFET from Infineon Technologies. It is designed for use in a wide range of power switching applications.
Product Features and Performance
100V Drain-to-Source Voltage (Vdss)
15mΩ On-State Resistance (Rds(on)) at 45A and 10V Gate Voltage
80A Continuous Drain Current (Id) at 25°C
260W Power Dissipation (Tc)
Wide Operating Temperature Range: -55°C to 175°C
Low Input Capacitance (Ciss): 3830pF at 25V
Fast Switching Characteristics
Product Advantages
High Efficiency
Low Conduction Losses
Compact Size
Robust and Reliable Performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 15mΩ @ 45A, 10V
Continuous Drain Current (Id): 80A @ 25°C
Input Capacitance (Ciss): 3830pF @ 25V
Power Dissipation (Tc): 260W
Quality and Safety Features
RoHS3 Compliant
Meets Industry Safety Standards
Compatibility
Compatible with a wide range of power switching applications
Application Areas
Switching Power Supplies
Motor Drives
Industrial Electronics
Automotive Electronics
Product Lifecycle
This product is an active and widely available part from Infineon Technologies.
Replacements and upgrades are readily available.
Key Reasons to Choose This Product
Excellent performance and efficiency
Low conduction losses
Compact and robust design
Wide operating temperature range
Reliable and long-lasting performance
Compatibility with a wide range of applications
IRF8010SIR
IRF7910TRPBFInfineon TechnologiesMOSFET 2N-CH 12V 10A 8SOIC