Manufacturer Part Number
IRF7862TRPBF
Manufacturer
Infineon Technologies
Introduction
The IRF7862TRPBF is a high-performance N-channel MOSFET transistor in a surface mount 8-SOIC package.
Product Features and Performance
Drain-to-source voltage (Vdss) of 30V
Extremely low on-resistance (Rds(on)) of 3.7mΩ @ 20A, 10V
Continuous drain current (Id) of 21A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching capabilities with low gate charge (Qg) of 45nC @ 4.5V
Compact 8-SOIC package for efficient board space utilization
Product Advantages
Excellent power efficiency due to low on-resistance
High current handling capability
Reliable operation across wide temperature range
Compact surface mount package for space-constrained designs
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs(max)): ±20V
On-Resistance (Rds(on)): 3.7mΩ @ 20A, 10V
Continuous Drain Current (Id): 21A @ 25°C
Input Capacitance (Ciss): 4090pF @ 15V
Power Dissipation (Pd): 2.5W
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging for automated assembly
Compatibility
Compatible with a wide range of electronic circuits and power conversion applications
Application Areas
Ideal for use in power supplies, motor drives, and other high-current switching applications
Product Lifecycle
Currently in active production
No plans for discontinuation, with ongoing availability and support
Key Reasons to Choose
Exceptional power efficiency due to ultra-low on-resistance
High current handling capability for demanding applications
Reliable operation across wide temperature range
Compact surface mount package for space-constrained designs
Compliance with RoHS3 environmental standards
IRF7862TRPBF MOSIR