Manufacturer Part Number
IRF7811AVTRPBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor suitable for a wide range of power switching and amplification applications.
Product Features and Performance
Low on-resistance for high efficiency
Fast switching speed for high-frequency operation
Tight threshold voltage control for reliable performance
Rugged design for enhanced reliability
Product Advantages
Excellent thermal management for high power dissipation
Compact surface-mount package for space-saving designs
Robust performance across a wide temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 14mΩ @ 15A, 4.5V
Continuous Drain Current (Id): 10.8A @ 25°C
Input Capacitance (Ciss): 1801pF @ 10V
Power Dissipation (Pd): 2.5W
Quality and Safety Features
RoHS3 compliant
Stringent quality control and reliability testing
Compatibility
Suitable for a wide range of power switching and amplification applications
Interchangeable with similar MOSFET devices in the same package and footprint
Application Areas
Switch-mode power supplies
Motor drives
Lighting and LED drivers
Audio amplifiers
Industrial and consumer electronics
Product Lifecycle
Currently in active production
Replacements and upgrades available from Infineon and other manufacturers
Key Reasons to Choose This Product
High efficiency and low power losses
Fast switching speed for high-frequency operation
Robust performance across a wide temperature range
Compact surface-mount package for space-saving designs
Proven reliability and quality control from Infineon
IRF7811ATRPBF MOSCypress Semiconductor (Infineon Technologies)