Manufacturer Part Number
IRF7739L1TRPBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET device designed for high-power, high-efficiency applications.
Product Features and Performance
Extremely low on-resistance for high efficiency
High current capability up to 270A
Very low gate charge for fast switching
Wide operating temperature range of -55°C to 175°C
Suitable for high-power, high-frequency switching applications
Product Advantages
Excellent thermal performance and power dissipation
Efficient power conversion with low losses
Fast switching for high-frequency operation
Robust and reliable design
Key Technical Parameters
Drain-Source Voltage (Vdss): 40V
On-Resistance (Rds(on)): 1mΩ
Continuous Drain Current (Id): 46A (at 25°C), 270A (at case temperature)
Input Capacitance (Ciss): 11,880pF
Power Dissipation: 3.8W (at 25°C), 125W (at case temperature)
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Suitable for high-power, high-efficiency switching applications such as power supplies, motor drives, and energy conversion systems
Application Areas
Automotive electronics
Industrial power conversion
Renewable energy systems
Telecom and datacom power
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options may be available from Infineon or other manufacturers.
Key Reasons to Choose This Product
Extremely low on-resistance for high efficiency and low power losses
High current capability for high-power applications
Fast switching performance for high-frequency operation
Wide operating temperature range for robust and reliable performance
Compact and thermally efficient design for easy implementation