Manufacturer Part Number
IRF7580MTRPBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET in DirectFET Isometric ME package
Product Features and Performance
Low on-resistance of 3.6 mOhm @ 70A, 10V
High continuous drain current of 114A at 25°C
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 6510 pF @ 25V
Max. power dissipation of 115W at 25°C
Product Advantages
Excellent thermal performance due to DirectFET packaging
Efficient power conversion with low conduction losses
Reliable operation across wide temperature range
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3.6 mOhm @ 70A, 10V
Continuous Drain Current (Id): 114A @ 25°C
Input Capacitance (Ciss): 6510 pF @ 25V
Power Dissipation (Ptot): 115W @ 25°C
Quality and Safety Features
Robust MOSFET technology for reliable operation
Compliance with relevant safety standards
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Power supplies
Motor drives
Inverters
Power switching circuits
Product Lifecycle
This product is currently in production and no discontinuation is planned.
Replacements and upgrades may be available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent thermal performance and low conduction losses for efficient power conversion
Wide operating temperature range for reliable operation in diverse environments
High current capability and low on-resistance for demanding applications
Compact and thermally efficient DirectFET packaging
