Manufacturer Part Number
IRF7509TRPBF
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
N and P-Channel MOSFET Array
Product Features and Performance
Supports operating temperature range of -55°C to 150°C
Max power rating of 1.25W
Low on-resistance (RDS(on)) of 110mΩ @ 1.7A, 10V
High current handling capability of 2.7A continuous drain current at 25°C
Low input capacitance (Ciss) of 210pF @ 25V
Logic level gate with low threshold voltage (Vgs(th)) of 1V @ 250μA
Low gate charge (Qg) of 12nC @ 10V
Product Advantages
Efficient power handling
Low power losses
Compact surface mount package
Suitable for low-voltage, high-current applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 30V
Continuous Drain Current (ID): 2.7A @ 25°C, 2A
On-Resistance (RDS(on)): 110mΩ @ 1.7A, 10V
Input Capacitance (Ciss): 210pF @ 25V
Gate Threshold Voltage (Vgs(th)): 1V @ 250μA
Gate Charge (Qg): 12nC @ 10V
Quality and Safety Features
RoHS3 compliant
Micro8 package
Compatibility
Suitable for use in a variety of low-voltage, high-current applications
Application Areas
Power supplies
Motor drives
Switching circuits
General-purpose amplifiers
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose This Product
Efficient power handling and low power losses
Compact surface mount package
Suitable for low-voltage, high-current applications
Reliable performance across wide temperature range
RoHS3 compliance for environmental safety
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