Manufacturer Part Number
IRF7473TRPBF
Manufacturer
Infineon Technologies
Introduction
The IRF7473TRPBF is an N-Channel MOSFET transistor in the HEXFET series, suitable for a wide range of power switching and control applications.
Product Features and Performance
100V Drain-Source Voltage Rating
26mOhm Maximum On-Resistance at 10V Gate-Source Voltage
9A Continuous Drain Current at 25°C
5W Maximum Power Dissipation
Low Input Capacitance of 3180pF
Wide Operating Temperature Range of -55°C to 150°C
Product Advantages
Efficient power switching due to low on-resistance
Compact surface-mount package
Suitable for a variety of power electronics applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 26mOhm
Continuous Drain Current (Id): 6.9A
Input Capacitance (Ciss): 3180pF
Power Dissipation (Pd): 2.5W
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
This MOSFET is compatible with a wide range of power electronics circuits and systems.
Application Areas
Power supplies
Motor drives
Switching power amplifiers
Industrial and consumer electronics
Product Lifecycle
The IRF7473TRPBF is a current production part and is not nearing discontinuation. Replacement or upgraded parts may be available in the future.
Key Reasons to Choose This Product
Efficient power switching performance with low on-resistance
Compact surface-mount package for space-constrained designs
Wide operating temperature range for a variety of applications
RoHS3 compliance for environmental sustainability
Proven reliability and suitability for high-reliability power electronics