Manufacturer Part Number
IRF7413TRPBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel MOSFET transistor
Product Features and Performance
Low on-resistance (RDS(on)) of 11 mΩ at 7.3A, 10V
Capable of continuous drain current (ID) of 13A at 25°C
Fast switching speed with high gate charge (Qg) of 79 nC at 10V
Wide operating temperature range of -55°C to 150°C
Low input capacitance (Ciss) of 1800 pF at 25V
Power dissipation up to 2.5W at 25°C
Product Advantages
Efficient power conversion and control
Reliable operation in harsh environments
Compact surface mount package
Versatile application possibilities
Key Technical Parameters
Drain-to-Source Voltage (VDS): 30V
Gate-to-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 11 mΩ
Threshold Voltage (VGS(th)): 3V
Quality and Safety Features
RoHS3 compliant
8-SOIC (0.154", 3.90mm Width) package
Compatibility
Universal compatibility with various electronic circuits and systems
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
General power management and control
Product Lifecycle
Currently available, no discontinuation plans announced
Key Reasons to Choose This Product
High efficiency and low power losses
Robust performance in harsh environments
Compact and space-saving package
Versatile and suitable for a wide range of applications
Reliable and long-lasting operation
IRF7413PBFInternational RectifierMOSFET N-CH 30V 13A 8SO