Manufacturer Part Number
IRF7406TRPBF
Manufacturer
Infineon Technologies
Introduction
The IRF7406TRPBF is a P-channel MOSFET transistor in the HEXFET series, designed for a variety of switching and power management applications.
Product Features and Performance
30V drain-to-source voltage
45mΩ maximum on-resistance at 2.8A and 10V gate-to-source voltage
8A continuous drain current at 25°C
1100pF maximum input capacitance at 25V drain-to-source voltage
5W maximum power dissipation at 25°C
Product Advantages
Low on-resistance for efficient power conversion
High current handling capability
Compact 8-SOIC surface mount package
Key Technical Parameters
Drain-to-source voltage (Vdss): 30V
Maximum gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 45mΩ @ 2.8A, 10V
Continuous drain current (Id): 5.8A @ 25°C
Input capacitance (Ciss): 1100pF @ 25V
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments with an operating temperature range of -55°C to 150°C
Compatibility
Surface mount 8-SOIC package
Application Areas
Switching power supplies
Motor controls
Battery chargers
Lighting and LED drivers
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available from Infineon
Key Reasons to Choose This Product
Efficient power conversion with low on-resistance
High current handling for demanding applications
Compact surface mount package for space-constrained designs
Suitable for a wide range of operating temperatures
Backed by Infineon's reputation for quality and reliability