IRF7351TRPBF - Infineon Technologies

Manufacturer Part Number

IRF7351TRPBF

Manufacturer

Infineon Technologies

Introduction

Dual N-Channel HEXFET Power MOSFET

Designed for high-frequency, high-efficiency switching applications

Product Features and Performance

Low on-resistance (Rds(on)) of 17.8 mOhm

High current capability of 8A continuous drain current

High power handling capability of 2W

Wide operating temperature range of -55°C to 150°C

Logic level gate (Vgs(th) max of 4V)

Low input capacitance (Ciss max of 1330 pF)

Low gate charge (Qg max of 36 nC)

Product Advantages

Excellent performance for high-frequency switching applications

Efficient power conversion with low conduction losses

Reliable operation over a wide temperature range

Ease of use with logic level gate drive

Key Technical Parameters

Drain-Source Voltage (Vdss): 60V

On-Resistance (Rds(on)): 17.8 mOhm

Continuous Drain Current (Id): 8A

Input Capacitance (Ciss): 1330 pF

Gate Charge (Qg): 36 nC

Operating Temperature Range: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

ESD protection

Compatibility

Suitable for a wide range of high-frequency, high-efficiency switching applications

Application Areas

Switching power supplies

Motor drives

Class-D audio amplifiers

DC-DC converters

Industrial and consumer electronics

Product Lifecycle

Currently in production

Replacement or upgrade options available from Infineon

Several Key Reasons to Choose This Product

Excellent performance and efficiency for high-frequency switching

Reliable operation over a wide temperature range

Ease of use with logic level gate drive

RoHS3 compliance for environmentally friendly applications

Availability of replacement and upgrade options from the manufacturer