Manufacturer Part Number
IRF7317TRPBF
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
ROHS3 Compliant
Product Features and Performance
N and P-Channel MOSFET
20V Drain to Source Voltage
29mOhm Max Rds On @ 6A, 4.5V
MOSFET Technology
6A Continuous Drain Current @ 25°C
900pF Max Input Capacitance @ 15V
Logic Level Gate
27nC Max Gate Charge @ 4.5V
Surface Mount Packaging
Product Advantages
Efficient power switching
Low on-resistance
High current capability
Suitable for a wide range of applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 4.5V
Current Continuous Drain (Id) @ 25°C: 6.6A, 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
Vgs(th) (Max) @ Id: 700mV @ 250A
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Quality and Safety Features
ROHS3 Compliant
Compatibility
Surface Mount Packaging
Application Areas
Suitable for a wide range of power switching applications
Product Lifecycle
Current product
Several Key Reasons to Choose This Product
Efficient power switching performance
Low on-resistance for low power losses
High current capability for demanding applications
Suitable for a wide range of power management and control systems
Reliable and consistent performance