Manufacturer Part Number
IRF7309TRPBF
Manufacturer
Infineon Technologies
Introduction
Dual N-channel and P-channel power MOSFET transistor
Product Features and Performance
Optimized for high-speed switching applications
Low on-resistance for low power loss
Fast switching speed
High power density
Product Advantages
Efficient power conversion
Compact design
Reliable performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
On-Resistance (Rds(on)): 50mΩ
Continuous Drain Current (Id): 4A, 3A
Input Capacitance (Ciss): 520pF
Threshold Voltage (Vgs(th)): 1V
Gate Charge (Qg): 25nC
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature applications (-55°C to 150°C)
Compatibility
Standard 8-SOIC (0.154", 3.90mm Width) package
Suitable for surface mount applications
Application Areas
Switching power supplies
Motor drives
Electronic instruments
Industrial automation
Product Lifecycle
Current production model
Replacement or upgrade options available
Key Reasons to Choose This Product
Efficient power conversion with low on-resistance
Fast switching speed for high-speed applications
Compact design for space-constrained applications
Reliable performance in high-temperature environments
RoHS3 compliance for environmentally-friendly applications