Manufacturer Part Number
IRF6727MTRPBF
Manufacturer
Infineon Technologies
Introduction
Infineon's IRF6727MTRPBF is a high-performance, N-channel MOSFET in a DirectFET MX package. It is part of the HEXFET series and designed for high-power, high-efficiency applications.
Product Features and Performance
30V Drain-Source Voltage (Vdss)
±20V Gate-Source Voltage (Vgs)
7mOhm On-Resistance (Rds(on)) at 32A, 10V
32A Continuous Drain Current (Id) at 25°C (Ta)
180A Continuous Drain Current (Id) at 25°C (Tc)
6190pF Input Capacitance (Ciss) at 15V
8W Power Dissipation at 25°C (Ta), 89W at 25°C (Tc)
Fast switching performance
Product Advantages
Compact and efficient DirectFET MX package
Low on-resistance for high-efficiency power conversion
High current handling capability
Wide operating temperature range (-40°C to 150°C)
Key Technical Parameters
N-Channel MOSFET
30V Drain-Source Voltage (Vdss)
±20V Gate-Source Voltage (Vgs)
7mOhm On-Resistance (Rds(on))
32A Continuous Drain Current (Id)
6190pF Input Capacitance (Ciss)
8W Power Dissipation (Ta), 89W (Tc)
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Compatibility
Suitable for a wide range of high-power, high-efficiency applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial and automotive electronics
Product Lifecycle
Currently in active production
No known discontinuation plans
Replacements and upgrades may be available as technology evolves
Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance
High current handling capability
Compact and thermally efficient DirectFET MX package
Wide operating temperature range
Reliable and RoHS3 compliant design
Suitable for a variety of high-power applications