Manufacturer Part Number
IRF6714MTRPBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel HEXFET power MOSFET
Designed for high-speed, high-efficiency switching applications
Product Features and Performance
Low on-resistance for low conduction losses
Fast switching for high-frequency operation
High current capability up to 29A continuous (at 25°C)
Robust design with high avalanche energy rating
Product Advantages
Excellent power density and efficiency
Reliable performance in harsh environments
Optimized for switch-mode power supplies, motor drives, and other high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 25V
On-Resistance (Rds(on)): 2.1mΩ @ 29A, 10V
Input Capacitance (Ciss): 3890pF @ 13V
Power Dissipation: 2.8W (at 25°C), 89W (at case temperature)
Operating Temperature Range: -40°C to 150°C
Quality and Safety Features
Robust design for high reliability and ruggedness
Compliant with relevant safety and environmental standards
Compatibility
Suitable for a wide range of high-power, high-frequency switching applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial and automotive power electronics
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and power density
Reliable performance in harsh environments
Optimized for high-speed, high-power switching applications
High current capability and low on-resistance for reduced conduction losses
Fast switching for high-frequency operation
