Manufacturer Part Number
IRF6631TRPBF
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
HEXFET Series
DirectFET SQ Packaging
Surface Mount Mounting
Wide Operating Temperature Range: -40°C to 150°C
High Drain-Source Voltage: 30V
Low On-Resistance: 7.8mΩ @ 13A, 10V
High Continuous Drain Current: 13A (Ta), 57A (Tc)
Low Input Capacitance: 1450pF @ 15V
High Power Dissipation: 2.2W (Ta), 42W (Tc)
Product Advantages
Compact, space-saving DirectFET SQ package
Low on-resistance for efficient power transfer
High current handling capability
Wide temperature range for versatile applications
Key Technical Parameters
Vds: 30V
Vgs (Max): ±20V
Rds On (Max): 7.8mΩ @ 13A, 10V
Id (Continuous): 13A (Ta), 57A (Tc)
Ciss (Max): 1450pF @ 15V
Power Dissipation: 2.2W (Ta), 42W (Tc)
Vgs(th) (Max): 2.35V @ 25A
Drive Voltage: 4.5V (Max Rds On), 10V (Min Rds On)
Qg (Max): 18nC @ 4.5V
Quality and Safety Features
MOSFET (Metal Oxide) technology for reliable performance
Suitable for a wide range of operating conditions
Compatibility
Suitable for various power electronics applications
Application Areas
Power supplies
Motor drives
Voltage regulators
Switching circuits
Product Lifecycle
Currently available
No information on discontinuation or replacement
Key Reasons to Choose This Product
Compact, space-saving DirectFET SQ package
Low on-resistance for efficient power transfer
High current handling capability
Wide temperature range for versatile applications
Reliable MOSFET technology
Suitable for a variety of power electronics applications
