Manufacturer Part Number
IRF630NPBF
Manufacturer
Infineon Technologies
Introduction
The IRF630NPBF is a high-performance N-Channel MOSFET transistor from Infineon Technologies. It is designed for a wide range of power electronics applications.
Product Features and Performance
Supports operating temperatures from -55°C to 175°C
Drain-to-Source voltage rating of 200V
Gate-to-Source voltage range of ±20V
On-state resistance (Rds(on)) of 300mΩ @ 5.4A, 10V
Continuous drain current (Id) of 9.3A @ 25°C
Input capacitance (Ciss) of 575pF @ 25V
Power dissipation of 82W @ Tc
Product Advantages
High voltage and current handling capabilities
Low on-state resistance for efficient power conversion
Wide operating temperature range
Robust design for reliable performance
Key Technical Parameters
MOSFET technology
N-Channel FET type
Through-hole mounting
Quality and Safety Features
RoHS3 compliant
TO-220AB package
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Converters
Industrial electronics
Product Lifecycle
This product is an active and widely available MOSFET solution from Infineon.
Replacement or upgraded models may become available in the future as technology advances.
Key Reasons to Choose This Product
Excellent performance characteristics for power electronics applications
Robust and reliable design for demanding operating conditions
Cost-effective solution for high-voltage, high-current applications
Wide availability and support from Infineon Technologies
IRF630NPBF-MXIR
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