Manufacturer Part Number
IRF6216PBF
Manufacturer
Infineon Technologies
Introduction
The IRF6216PBF is a P-channel power MOSFET transistor that is part of Infineon's HEXFET series. It is designed for high-voltage, high-current switching applications.
Product Features and Performance
150V drain-to-source voltage rating
Low on-resistance of 240mOhm @ 1.3A, 10V
2A continuous drain current rating at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 1280pF @ 25V
5W maximum power dissipation
Product Advantages
Excellent switching performance for efficient power conversion
High voltage and current handling capability
Compact surface mount package
Wide temperature range for diverse applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 150V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 240mOhm @ 1.3A, 10V
Continuous Drain Current (Id): 2.2A @ 25°C
Input Capacitance (Ciss): 1280pF @ 25V
Power Dissipation (Pd): 2.5W
Quality and Safety Features
RoHS3 compliant
8-SOIC (0.154", 3.90mm Width) package
Compatibility
Compatible with various high-voltage, high-current switching applications
Application Areas
Power supplies
Motor drives
Inverters
Switch-mode power supplies
Automotive electronics
Product Lifecycle
Current product offering
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
Excellent performance and efficiency in high-voltage, high-current switching applications
Wide operating temperature range for diverse use cases
Compact surface mount package for space-constrained designs
RoHS3 compliance for environmentally friendly applications
Part of the reliable and well-established HEXFET series from Infineon