Manufacturer Part Number
IRF5802TRPBF
Manufacturer
Infineon Technologies
Introduction
N-channel MOSFET transistor designed for high-frequency switching applications
Product Features and Performance
Optimized for high-frequency switching applications
Low on-resistance (RDS(on)) of 1.2 Ω
High drain-to-source voltage (Vds) of 150 V
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge (Qg) of 6.8 nC
Product Advantages
Excellent high-frequency performance
Low power dissipation
Compact SOT-23-6 package
Key Technical Parameters
Drain-to-Source Voltage (Vds): 150 V
Gate-to-Source Voltage (Vgs): ±30 V
Continuous Drain Current (Id): 900 mA
On-Resistance (RDS(on)): 1.2 Ω
Input Capacitance (Ciss): 88 pF
Power Dissipation (Pd): 2 W
Quality and Safety Features
RoHS3 compliant
Meets high-reliability standards for industrial and automotive applications
Compatibility
Suitable for use in a variety of high-frequency switching applications
Application Areas
Switching power supplies
Motor drives
Lighting ballasts
Industrial and automotive electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Excellent high-frequency performance
Low power dissipation
Compact and reliable package
Wide operating temperature range
Suitable for a variety of high-frequency switching applications