Manufacturer Part Number
IRF4905PBF
Manufacturer
Infineon Technologies
Introduction
The IRF4905PBF is a P-Channel MOSFET transistor designed for power switching applications.
Product Features and Performance
P-Channel MOSFET design
Drain-to-Source Voltage (Vdss) of 55V
Maximum Gate-to-Source Voltage (Vgs) of ±20V
Low On-State Resistance (Rds(on)) of 20mOhm @ 38A, 10V
Continuous Drain Current (Id) of 74A at 25°C (Tc)
Power Dissipation (Pd) of 200W at 25°C (Tc)
Input Capacitance (Ciss) of 3400pF at 25V
Gate Charge (Qg) of 180nC at 10V
Product Advantages
Excellent energy efficiency due to low on-state resistance
High current handling capability
Suitable for a wide range of power switching applications
Key Technical Parameters
MOSFET Technology: P-Channel
Package: TO-220AB
Operating Temperature Range: -55°C to 175°C
Drain-to-Source Voltage (Vdss): 55V
Gate-to-Source Voltage (Vgs): ±20V
Threshold Voltage (Vgs(th)): 4V @ 250A
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature, high-power applications
Compatibility
This MOSFET is suitable for use in a wide range of power switching applications, including motor drives, power supplies, and industrial control systems.
Application Areas
Power supplies
Motor drives
Industrial control systems
Switching power applications
Product Lifecycle
The IRF4905PBF is an actively supported product from Infineon Technologies. There are no plans for discontinuation, and replacement or upgrade options are available.
Key Reasons to Choose This Product
Excellent energy efficiency due to low on-state resistance, allowing for reduced power consumption and heat dissipation in the application.
High current handling capability, making it suitable for high-power applications.
Wide operating temperature range, enabling use in harsh environments.
RoHS3 compliance, ensuring environmental responsibility.
Proven reliability and performance from a reputable manufacturer, Infineon Technologies.