IRF3710PBF - Infineon Technologies

Manufacturer Part Number

IRF3710PBF

Manufacturer

Infineon Technologies

Introduction

The IRF3710PBF is a high-performance N-channel power MOSFET from Infineon Technologies, part of the HEXFET series.

Product Features and Performance

High power density and efficiency

Low on-state resistance (Rds(on)) for low conduction losses

Fast switching with low gate charge (Qg)

Wide operating temperature range of -55°C to 175°C

High drain-source voltage rating of 100V

Product Advantages

Excellent thermal management for high power applications

Reliable and robust performance

Suitable for a wide range of power electronic circuits and systems

Key Technical Parameters

Drain-Source Voltage (Vdss): 100V

Maximum Gate-Source Voltage (Vgs): ±20V

On-State Resistance (Rds(on)): 23mΩ @ 28A, 10V

Continuous Drain Current (Id): 57A @ 25°C (Tc)

Input Capacitance (Ciss): 3130pF @ 25V

Power Dissipation: 200W (Tc)

Quality and Safety Features

RoHS3 compliant

TO-220AB package for reliable thermal performance

Tested and qualified for high-reliability applications

Compatibility

Suitable for a wide range of power electronic circuits and systems, including motor drives, power supplies, and power conversion applications.

Application Areas

Industrial and consumer power electronics

Motor control and power conversion

Switching power supplies

Inverters and converters

Product Lifecycle

The IRF3710PBF is an active and widely used product in Infineon's HEXFET series.

Replacement or upgraded products may be available in the future, but the IRF3710PBF remains a reliable and proven solution.

Key Reasons to Choose This Product

Excellent thermal management and power density for high-power applications

Fast switching and low conduction losses for efficient power conversion

Robust and reliable performance across a wide temperature range

Well-established and supported product within Infineon's HEXFET portfolio

Suitable for a diverse range of power electronics applications