Manufacturer Part Number
IRF3205PBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET in a TO-220AB package for high-frequency and high-power switching applications.
Product Features and Performance
Drain-to-source voltage up to 55V
Extremely low on-resistance of 8mOhm
Continuous drain current of 110A at 25°C case temperature
Power dissipation up to 200W at 25°C case temperature
Fast switching speed and low gate charge
Operating temperature range of -55°C to 175°C
Product Advantages
Excellent power efficiency due to low on-resistance
High current handling capability
Robust and reliable performance in high-power applications
Suitable for high-frequency and high-power switching
Key Technical Parameters
Drain-to-source voltage (Vdss): 55V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 8mOhm @ 62A, 10V
Continuous drain current (Id): 110A @ 25°C
Input capacitance (Ciss): 3247pF @ 25V
Power dissipation (Pd): 200W @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability and safety-critical applications
Compatibility
Compatible with various high-power and high-frequency switching applications
Application Areas
Switching power supplies
Motor drives
Inverters
Converters
Industrial and automotive electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgrade options may be available from Infineon or other manufacturers.
Key Reasons to Choose This Product
Excellent power efficiency and low on-resistance
High current handling capability
Robust and reliable performance in high-power applications
Suitable for high-frequency and high-power switching
RoHS3 compliance for use in safety-critical applications
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