Manufacturer Part Number
IRF2807PBF
Manufacturer
Infineon Technologies
Introduction
The IRF2807PBF is a high-performance N-channel MOSFET transistor from Infineon Technologies, designed for various power management and switching applications.
Product Features and Performance
75V Drain-Source Voltage (Vdss)
82A Continuous Drain Current (Id)
13mΩ On-State Resistance (Rds(on)) at 43A, 10V
Wide Operating Temperature Range: -55°C to 175°C
Fast Switching Characteristics
Low Gate Charge (Qg)
High Power Dissipation Capability: 230W (Tc)
Product Advantages
Excellent performance for power conversion and motor control applications
Efficient power handling with low on-state resistance
Reliable operation in high-temperature environments
Suitable for a wide range of industrial and automotive applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 75V
Gate-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 82A (at 25°C)
On-State Resistance (Rds(on)): 13mΩ (at 43A, 10V)
Input Capacitance (Ciss): 3820pF (at 25V)
Gate Charge (Qg): 160nC (at 10V)
Quality and Safety Features
RoHS3 compliant
Hermetically sealed TO-220AB package for reliable operation
Compatibility
Suitable for use in various power conversion, motor control, and switching applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Industrial automation
Automotive electronics
Product Lifecycle
The IRF2807PBF is an active product and is not nearing discontinuation.
Replacement or upgrade options may be available from Infineon for newer or more advanced MOSFET devices.
Key Reasons to Choose This Product
Excellent power handling and efficiency with low on-state resistance
Reliable operation in high-temperature environments
Suitable for a wide range of industrial and automotive applications
Fast switching characteristics for efficient power conversion
Robust and hermetically sealed package for reliable operation
IRF2807STRRIR