Manufacturer Part Number
IRF2804STRLPBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET with very low on-resistance
Product Features and Performance
Very low on-resistance (RDS(on) = 2 mΩ max. at VGS = 10 V, ID = 75 A)
High current handling capability (ID = 75 A at TC = 25°C)
Wide operating temperature range (-55°C to 175°C)
High input capacitance (Ciss = 6450 pF max. at VDS = 25 V)
High power dissipation (PD = 300 W at TC = 25°C)
Product Advantages
Excellent performance for high-current, high-power applications
Compact D2PAK package for efficient heat dissipation
Suitable for a wide range of operating temperatures
Key Technical Parameters
Drain to Source Voltage (VDS): 40 V
Gate to Source Voltage (VGS): ±20 V
Continuous Drain Current (ID): 75 A at TC = 25°C
RDS(on): 2 mΩ max. at VGS = 10 V, ID = 75 A
Input Capacitance (Ciss): 6450 pF max. at VDS = 25 V
Power Dissipation (PD): 300 W at TC = 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount applications
Compatibility
Suitable for a wide range of power electronics applications, including motor drives, power supplies, and industrial automation
Application Areas
High-current, high-power applications such as motor drives, power supplies, and industrial automation
Product Lifecycle
Current product, no discontinuation or replacement plans
Several Key Reasons to Choose This Product
Excellent performance with very low on-resistance and high current handling capability
Wide operating temperature range and high power dissipation capabilities
Compact D2PAK package for efficient heat dissipation
Suitable for a wide range of power electronics applications
RoHS3 compliant and suitable for surface mount applications