Manufacturer Part Number
IRF250P224
Manufacturer
Infineon Technologies
Introduction
The IRF250P224 is a high-performance N-channel power MOSFET from Infineon Technologies, designed for a wide range of power conversion and control applications.
Product Features and Performance
High drain-to-source voltage rating of 250V
Low on-resistance (RDS(on)) of 12mΩ @ 58A, 10V
Continuous drain current (ID) of 96A at 25°C case temperature
Wide operating temperature range of -55°C to 175°C
Fast switching speed and low gate charge (Qg) of 203nC @ 10V
Robust design with high avalanche energy capability
Product Advantages
Excellent efficiency and low power losses
Reliable and rugged performance
Suitable for high-power, high-voltage applications
Easy to drive and integrate into power circuits
Key Technical Parameters
Drain-to-Source Voltage (VDS): 250V
Gate-to-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 12mΩ @ 58A, 10V
Continuous Drain Current (ID): 96A @ 25°C
Input Capacitance (Ciss): 9915pF @ 50V
Power Dissipation (Pd): 313W @ 25°C
Quality and Safety Features
RoHS3 compliant
Proven quality and reliability
Designed for safe and reliable operation
Compatibility
Suitable for a wide range of power electronics applications, including motor drives, power supplies, and inverters.
Application Areas
Industrial motor drives
Uninterruptible power supplies (UPS)
Welding equipment
Induction heating
Switch-mode power supplies
Product Lifecycle
The IRF250P224 is an active and widely-used product in Infineon's portfolio.
No immediate plans for discontinuation, and replacement parts are readily available.
Key Reasons to Choose This Product
High power handling capability
Excellent efficiency and low power losses
Reliable and robust performance
Easy to integrate and drive
Suitable for a wide range of high-power, high-voltage applications