IRF135S203 - Infineon Technologies

Manufacturer Part Number

IRF135S203

Manufacturer

Infineon Technologies

Introduction

High power density N-channel MOSFET transistor

Designed for high-frequency, high-power switching applications

Product Features and Performance

Wide operating temperature range of -55°C to 175°C

Very low on-resistance (Rds(on)) of 8.4 mΩ @ 77A, 10V

High continuous drain current (Id) of 129A at 25°C

High power dissipation capability of 441W at Tc

Fast switching speeds with low gate charge (Qg) of 270 nC @ 10V

Product Advantages

Excellent thermal efficiency and power handling capabilities

Reliable performance in high-power, high-frequency applications

Compact and space-saving DPak (TO-263-3) package

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 135V

Gate-to-Source Voltage (Vgs): ±20V

Input Capacitance (Ciss): 9700 pF @ 50V

Threshold Voltage (Vgs(th)): 4V @ 250A

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Compatible with various high-frequency, high-power switching applications

Application Areas

Switching power supplies

Motor drives

Industrial automation and control

Automotive electronics

Product Lifecycle

This is an active product from Infineon Technologies

Replacement or upgraded models may be available in the future

Key Reasons to Choose This Product

Exceptional power handling and thermal performance

Reliable and robust design for demanding applications

Compact package with high power density

Proven performance in a wide range of high-power switching systems