IRF1010EZSTRLP - Infineon Technologies

Manufacturer Part Number

IRF1010EZSTRLP

Manufacturer

Infineon Technologies

Introduction

High-performance N-channel MOSFET with extremely low on-resistance for high-frequency, high-power density applications.

Product Features and Performance

Very low on-resistance (RDS(on) = 8.5 mΩ @ 51 A, 10 V)

High current capability (75 A continuous, 10 V)

High frequency operation (low input capacitance of 2,810 pF @ 25 V)

Wide operating temperature range (-55°C to 175°C)

Rugged and reliable design

Product Advantages

Excellent efficiency and thermal management for high-power applications

Supports high-frequency switching for improved power density

Wide operating temperature range for use in harsh environments

Key Technical Parameters

Drain-to-Source Voltage (VDS): 60 V

Gate-to-Source Voltage (VGS): ±20 V

Continuous Drain Current (ID): 75 A @ 25°C (Tc)

On-State Resistance (RDS(on)): 8.5 mΩ @ 51 A, 10 V

Input Capacitance (Ciss): 2,810 pF @ 25 V

Power Dissipation (Pd): 140 W (Tc)

Quality and Safety Features

RoHS3 compliant

Robust D2PAK package for high power density and reliability

Compatibility

Suitable for a wide range of high-power, high-frequency applications

Application Areas

Switching power supplies

Motor drives

Industrial and automotive power electronics

Telecom and server power systems

Product Lifecycle

This product is currently available and not nearing discontinuation

Replacements and upgrades may be available in the future

Several Key Reasons to Choose This Product

Extremely low on-resistance for high efficiency and power density

High current capability and wide operating temperature range

Robust and reliable design for demanding applications

Supports high-frequency switching for improved power conversion