Manufacturer Part Number
IRF1010EZSTRLP
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with extremely low on-resistance for high-frequency, high-power density applications.
Product Features and Performance
Very low on-resistance (RDS(on) = 8.5 mΩ @ 51 A, 10 V)
High current capability (75 A continuous, 10 V)
High frequency operation (low input capacitance of 2,810 pF @ 25 V)
Wide operating temperature range (-55°C to 175°C)
Rugged and reliable design
Product Advantages
Excellent efficiency and thermal management for high-power applications
Supports high-frequency switching for improved power density
Wide operating temperature range for use in harsh environments
Key Technical Parameters
Drain-to-Source Voltage (VDS): 60 V
Gate-to-Source Voltage (VGS): ±20 V
Continuous Drain Current (ID): 75 A @ 25°C (Tc)
On-State Resistance (RDS(on)): 8.5 mΩ @ 51 A, 10 V
Input Capacitance (Ciss): 2,810 pF @ 25 V
Power Dissipation (Pd): 140 W (Tc)
Quality and Safety Features
RoHS3 compliant
Robust D2PAK package for high power density and reliability
Compatibility
Suitable for a wide range of high-power, high-frequency applications
Application Areas
Switching power supplies
Motor drives
Industrial and automotive power electronics
Telecom and server power systems
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
Extremely low on-resistance for high efficiency and power density
High current capability and wide operating temperature range
Robust and reliable design for demanding applications
Supports high-frequency switching for improved power conversion
IRF1010NSIR
IRF1010EZInfineon TechnologiesMOSFET N-CH 60V 75A TO220AB