IR2302STRPBF - Infineon Technologies

Manufacturer Part Number

IR2302STRPBF

Manufacturer

Infineon Technologies

Introduction

High-performance power management integrated circuit designed for efficient gate driving

Product Features and Performance

Driven Configuration: Half-Bridge

Channel Type: Synchronous

Number of Drivers: 2

Suitable for IGBT, N-Channel MOSFET

Supply Voltage Range: 5V to 20V

Logic Voltage VIL, VIH: 0.8V, 2.9V

Source Current Peak Output: 200mA

Sink Current Peak Output: 350mA

Input Type: Non-Inverting

High Side Voltage Max (Bootstrap): 600V

Typical Rise Time: 130ns

Typical Fall Time: 50ns

High Operating Temperature Range: -40°C to 150°C (TJ)

Product Advantages

Provides robust drive for half-bridge circuit configurations

Ensures efficient switching with fast rise and fall times

Capable of driving high-voltage IGBTs and MOSFETs

High thermal performance with a wide operating temperature range

Integrated under-voltage lockout protection

Key Technical Parameters

Peak Output Currents: 200mA (source), 350mA (sink)

Bootstrap Voltage Capability up to 600V

Quality and Safety Features

Under-voltage lockout for both channels

Matched propagation delay for both channels

3V and 5V input logic compatible

Compatibility

Compatible with surface mount technology (SMT)

Can be used with various IGBTs and N-Channel MOSFETs

Suitable for 8-SOIC package integration

Application Areas

Motor Drives

DC-DC Converters

High-Frequency Power Supplies

Half-Bridge and Full-Bridge Converters

High Power Switching Applications

Product Lifecycle

Status: Active

Not nearing discontinuation

Availability of replacements or upgrades should be checked with the manufacturer

Several Key Reasons to Choose This Product

Reliable performance by a reputable manufacturer, Infineon Technologies

Wide voltage range accommodating diverse power design needs

Enhanced safety with under-voltage lockout and matched propagation delays

High integration potential for various high-power electronic systems

Designed for easy implementation in modern SMT manufacturing processes

Tailored for high-temperature and high-voltage environments with robust construction