Manufacturer Part Number
IR2132JTR
Manufacturer
Infineon Technologies
Introduction
The Infineon Technologies IR2132JTR is a high-performance, 3-phase gate driver IC designed for driving insulated-gate bipolar transistors (IGBTs) and N-channel MOSFETs in power conversion applications. It provides six independent half-bridge driver channels with high-side and low-side gate driving capabilities.
Product Features and Performance
Supports 10V to 20V supply voltage range
Provides 250mA peak source and 500mA peak sink current drive capability for each channel
Features inverting logic inputs with 0.8V low and 2.2V high thresholds
Supports a high-side bootstrap voltage up to 600V
Typical rise and fall times of 80ns and 35ns, respectively
Operates over a wide temperature range of -40°C to 150°C
Product Advantages
Highly efficient and reliable IGBT/MOSFET gate driving
Compact and integrated 3-phase gate driver solution
Supports a wide range of power conversion applications
Key Reasons to Choose This Product
Robust and reliable performance for demanding power electronics applications
Optimized for high-frequency switching and fast transient response
Integrated protection features for enhanced system reliability
Space-saving design with a compact 44-LCC package
Quality and Safety Features
Integrated undervoltage lockout, shoot-through protection, and cross-conduction prevention
Designed to meet stringent quality and safety standards for industrial applications
Compatibility
Suitable for driving a variety of IGBT and N-channel MOSFET power devices
Application Areas
Suitable for 3-phase motor drives, variable-frequency drives, uninterruptible power supplies (UPS), and other power conversion systems
Product Lifecycle
The IR2132JTR is currently an obsolete product. Customers should contact our website's sales team for information on equivalent or alternative gate driver models that may be available.
IR2132STRPBF.IR